Sensitivity-controllable P-N Diode Temperature Sensor with High-sensitivity

Sensitivity-controllable P-N Diode Temperature Sensor with High-sensitivity
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초록

A high-sensitive diode temperature sensor using a simple circuit combining a diode and a resistor is proposed. First, a diode voltage-temperature relationship is derived for the temperature change, which is verified through analytical simulations and experimental measurements. In order to enhance the temperature sensitivity, we propose a novel approach that uses the ratio of the resistor voltage to the diode voltage (VR/VD) is employed. We also derive the temperature sensitivity expression of our model as a function of VS (power supply voltage) and VD0 (reference diode voltage measured at 25 oC). It is observed that the temperature sensitivity can be controlled by adjusting Vs. For Vs = 5.0 V, R = 100 Ω, and VD0 = 0.761 V, the temperature sensitivity shows a significant increase by 8.7 times compared to the typical temperature characteristics of the diode over temperatures ranging from -25 oC to 75 oC.

키워드

Temperature sensordiode sensorTemperature sensitivitydiode voltagediode current
제목
Sensitivity-controllable P-N Diode Temperature Sensor with High-sensitivity
제목 (타언어)
Sensitivity-controllable P-N Diode Temperature Sensor with High-sensitivity
저자
Cho, Chun HyungKim, Hyun tai
DOI
10.5573/JSTS.2021.21.6.373
발행일
2021-12
유형
Article
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
21
6
페이지
373 ~ 380