AlGaN/GaN heterojunction field-effect transistor with embedded clamping diode

초록

We developed an AlGaN/GaN heterojunction field-effect transistor with a MOS gate and an embedded clamping diode to achieve normally-off operation. The input signal level shifts downward when a capacitor is connected to the device because of the embedded diode, which mimics a clamping circuit. Thus, the device, which initially has a negative threshold voltage, functions as a normally-off device with a "virtual" positive threshold voltage. The proposed device has the advantages of high current density and easy implementation compared with the conventional AlGaN/GaN-based normally-off devices. (C) 2015 The Japan Society of Applied Physics

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