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New nonvolatile static memory cell based on nanoelectromechanical device
- Choi, M.;
- Kim, H.;
- Kim, Youngmin
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0초록
The application of nanoelectromechanical (NEM) memory switches to memory cell has been proposed. This memory cell has a nonvolatile property. The memory cell can be designed by using one NEM device and four transistors. The area of the memory array using the proposed cell can be reduced compared to conventional SRAM because metal interconnect layers are used for memory storage. Though the writing speed is slower than the conventional memory due to the mechanical beam movement to store data. However, it provides fast reading and nonvolatile property. © 2021 IEEE.
키워드
Memory Cell; Nanoelectromechanical (NEM) memory switch; Nonvolatile operation; Cells; Cytology; Memory architecture; Semiconductor storage; Conventional memory; Conventional sram; Interconnect layers; Memory storage; Nanoelectromechanical devices; Nanoelectromechanical memory (NEM); Static memory cells; Writing speed; Static random access storage
- 제목
- New nonvolatile static memory cell based on nanoelectromechanical device
- 저자
- Choi, M.; Kim, H.; Kim, Youngmin
- 발행일
- 2021
- 유형
- Proceedings Paper
- 저널명
- 2021 International Conference on Electronics, Information, and Communication, ICEIC 2021
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- ISSN
- P 0000-0000