Stable high-temperature operation of ultra-wide bandgap Al-rich AlGaN HFET

초록

Wide- and ultra-wide bandgap semiconductors are key to realizing power devices that can operate under extreme conditions. In this work, we demonstrate that Al-rich AlGaN heterostructure field-effect transistors (HFETs) provide robust operation up to 300 degrees C. The devices exhibited stable electrical performance with minimal degradation in current and resistance, while maintaining nearly constant threshold voltage and exceptionally low gate leakage despite employing a Schottky gate. Furthermore, pulsed measurements confirmed the absence of current collapse even without surface passivation, highlighting suppressed trapping effects. These results establish Al-rich AlGaN HFETs as promising candidates for high-power and high-temperature applications.

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