Photochemical wet etching of (001) plane f3-phase Ga2O3, and its anisotropic etching behavior

초록

The photochemical (PC) wet etching behavior of (001) plane /3-phase Ga2O3 (/3-Ga2O3) single crystal was investigated using potassium hydroxide etchant solution under ultraviolet illumination in the temperature range of 80-95 degrees C. The etch rate was 1.65 nm/min at 80 degrees C, and increased up to 4.88 nm/min at 95 degrees C. The etch rate of the (001) plane /3-Ga2O3 shows strong temperature dependence with the activation energy of 0.798 eV. The PC wet etching characteristics of the (001) plane /3-Ga2O3 was compared with those of (201) and (010) plane /3-Ga2O3. The etch rates increased in order of the (010), (201), and (001) plane, which is accordance with the increasing surface energy trend. The oval line-shaped grooves aligned along [010] direction were observed on the etched (001) plane /3-Ga2O3 crystal surface after 30 min. PC wet etching at 80 degrees C.

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