Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

초록

We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semicon-ductor-heterojunction field-effect transistors (recessedMOS- HFET) with SiO2 gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was 380 cm(2)/V.s near the threshold voltage. The effective channel mobility at the on-state bias condition was 115 cm(2)/V.s at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

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