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Fabrication and Electrical Properties of Chemical Bath Deposited CdS-Based Transparent Thin-Film-Transistors
- Kwon, J. H.;
- Ahn, J. S.;
- Yang, H.
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WEB OF SCIENCE
0초록
Using CdS active layer generated by a chemical bath deposition, transparent thin-film-transistors (TFTs) were fabricated with a bottom-gate scheme of glass/ITO/SiNx/CdS/Al. After annealing as-grown CdS at 350 degrees C, fabricated transparent TFT exhibited a saturated field effect mobility of 0.7 cm(2)/V.s, a threshold voltage of 11.3 V and an on/off ratio of similar to 10(7).
키워드
NANORODS; ZNO
- 제목
- Fabrication and Electrical Properties of Chemical Bath Deposited CdS-Based Transparent Thin-Film-Transistors
- 저자
- Kwon, J. H.; Ahn, J. S.; Yang, H.
- 발행일
- 2011
- 유형
- Proceedings Paper
- 저널명
- IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
- 페이지
- 117 ~ 120
- 언어
- ENG
- 출판사
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- 발행국가
- 일본
- 분량
- 4 페이지
- ISSN
- P 1883-2490