Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source-Drain Resistances in MOSFETs

초록

A new technique for a separate extraction of the current-path-dependent resistance (R(SD0)) from the contact-dependent source and drain resistances (R(Se) and R(De)) is reported for a single MOSFET. We also report a technique for a separation of V(GS)-dependent source and drain resistance (R(SDi)) from the V(GS)- and L(eff)-dependent channel resistance (R(ch)) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R(Se) = 10.5-12.4 Omega, R(De) congruent to 12.7 Omega, and R(SD0) = 4.7 Omega for W = 10 mu m. V(GS)-dependent but L-independent R(SDi) is extracted to be 2.8-4.2 Omega.

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