P-GaN/AlGaN/GaN E-Mode HEMT With Extended MOS Gate

초록

In this study, we propose a p-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) featuring an extended metal-oxide-semiconductor (MOS) gate structure to enhance device performance. The extended MOS gate, located over the p-GaN region and extending toward the drain side, increases current density while maintaining high breakdown voltage. By applying a positive bias to the extended MOS gate, the two-dimensional electron gas density beneath the gate is enhanced, resulting in a higher drain current and lower on-resistance. Additionally, the extended gate structure mitigates the peak electric field in the p-GaN layer, thereby further improving breakdown voltage. These findings demonstrate the effectiveness of the extended MOS gate structure in enhancing the electrical performance of p-GaN gate HEMTs.

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