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김형탁 프로필 사진

김형탁

Kim, Hyung tak

공과대학

전자전기공학부

연도별 연구 활동 현황

전체 87건 중 1번부터 10번까지의 결과를 표시합니다.

2026

Article

Gate-Current-Dominated Positive Threshold Voltage Shift Under PBTI Stress in Schottky p-GaN Gate HEMTs

Article

E-mode P-GaN/AlGaN/GaN HEMT with Diode-Engineered Gate Configuration for Extended Gate Voltage Swing

Article

Investigation of Prolonged Negative Threshold Voltage Shift Induced by Low Drain Bias in Schottky p-GaN Gate HEMTs

2025

Article

P-GaN/AlGaN/GaN E-Mode HEMT With Extended MOS Gate

Article

Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN

Article

Analysis of Channel Thermal Resistance in AlGaN/GaN High Electron Mobility Transistors-on SiC with Different Buffer Thickness

Article

Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy

Article

Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film

2024

Article

Analysis on Hot Carrier Injection of 0.15 lim Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy

Article

P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

상세 보기

김형탁

자료유형

발행연도

키워드

언어

Gate-Current-Dominated Positive Threshold Voltage Shift Under PBTI Stress in Schottky p-GaN Gate HEMTs

E-mode P-GaN/AlGaN/GaN HEMT with Diode-Engineered Gate Configuration for Extended Gate Voltage Swing

Investigation of Prolonged Negative Threshold Voltage Shift Induced by Low Drain Bias in Schottky p-GaN Gate HEMTs

P-GaN/AlGaN/GaN E-Mode HEMT With Extended MOS Gate

Investigation of Temperature-Dependent Gate Degradation in Normally-Off AlGaN/GaN High-Electron-Mobility Transistor p-GaN

Analysis of Channel Thermal Resistance in AlGaN/GaN High Electron Mobility Transistors-on SiC with Different Buffer Thickness

Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy

Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film

Analysis on Hot Carrier Injection of 0.15 lim Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy

P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V