E-mode P-GaN/AlGaN/GaN HEMT with Diode-Engineered Gate Configuration for Extended Gate Voltage Swing

초록

A novel enhancement-mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistor (HEMT) featuring a diode-engineered gate configuration was developed to extend the gate voltage swing range. In the proposed design, a small diode is monolithically integrated in series to the p-GaN gate, introducing an additional forward voltage drop to the threshold voltage of the HEMT. This approach significantly increases both the threshold voltage and the maximum allowable gate voltage swing compared to conventional p-GaN gate HEMTs, which typically exhibit low threshold voltages and limited gate swing ranges. The device employs a standard heterostructure, and the compact size of the embedded diode ensures that the increase in chip area is negligible. © 1980-2012 IEEE.

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