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김형탁 프로필 사진

김형탁

Kim, Hyung tak

공과대학

전자전기공학부

연도별 연구 활동 현황

전체 87건 중 11번부터 20번까지의 결과를 표시합니다.

2024

Article

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

2023

Article

Time-and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress

Article

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

Article

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

2022

Article

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Article

Deep-Ultraviolet Thermoreflectance Thermal Imaging of GaN High Electron Mobility Transistors

Article

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

2021

Article

Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C

Article

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Article

Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature

상세 보기

김형탁

자료유형

발행연도

키워드

언어

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Time-and Temperature-dependent Degradation of p-GaN Gate HEMTs under Forward Gate Voltage Stress

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films

Deep-Ultraviolet Thermoreflectance Thermal Imaging of GaN High Electron Mobility Transistors

Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs

Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C

Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method

Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature