Analysis of Channel Thermal Resistance in AlGaN/GaN High Electron Mobility Transistors-on SiC with Different Buffer Thickness

초록

In this work, we evaluated the thermal resistance of AlGaN/GaN-on-SiC High Electron Mobility Transistors (HEMTs) with different GaN buffer thicknesses. The thermal resistance was derived by correlating the decrease in ID.SAT values under both self-heating and external-heating conditions with pulsed I-V measurements. The experiments were carried out with a short duty cycle (0.1%) to minimize heating during the measurement state. ID.SAT decreases as the channel temperature increases by dissipated power or elevated external temperature, respectively. By matching the ID.SAT values from these two conditions, we determined the channel thermal resistance. The thin buffer GaN device demonstrated a lower thermal resistance, indicating that a thinner buffer layer aids in more efficient heat dissipation to the substrate.

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