Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film

초록

This study reports the fabrication and characterization of a p-GaN/AlGaN/GaN heterostructure field-effect transistor (HFET) incorporating a boron nitride (BN) film. The BN film was deposited at room temperature via RF sputtering (RT-RF sputtering) onto a SiO<inf>x</inf>. passivation layer. A dual-layer passivation scheme–comprising the SiO. layer and the room-temperature-deposited BN film–was proposed to enhance interface quality and improve the on-resistance characteristics. The RT-RF sputtering BN film was found to increase the 2DEG density at the AlGaN/GaN interface without degrading the overall device performance. As a result, the on-resistance was reduced by 30%. © 2013 IEEE.

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