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Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer
- Chung, G.;
- Cha, H. -Y.;
- Kim, H.
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11초록
We fabricated Pt-functionalised hydrogen gas sensors on AlGaN/GaN heterojunction platform and investigated the influence of GaN-cap layer on the sensing characteristics. Pt-Schottky diodes with GaN-cap layer exhibited a larger change of Schottky barrier height than ones with no GaN-cap layer when hydrogen gas was detected. Technology computer-aided design simulation indicated that the increase of electron concentration at heterojunction can be magnified by a larger change of barrier height. The AlGaN/GaN FET-type sensors with Pt catalyst on the gate area demonstrated significant enhancement of hydrogen gas sensitivity from 16 to 35% at 200 degrees C when GaN cap layer was employed.
키워드
field effect transistors; semiconductor heterojunctions; hydrogen; gas sensors; gallium compounds; aluminium compounds; wide band gap semiconductors; III-V semiconductors; Schottky barriers; platinum; Schottky diodes; technology CAD (electronics); semiconductor device models; electron density; catalysts; catalysis; AlGaN; GaN heterojunction gas sensors; GaN-cap layer; hydrogen gas sensors; AlGaN; GaN heterojunction platform; AlGaN; GaN FET-type sensors; hydrogen gas sensitivity; temperature 200; 0 degC; AlGaN-GaN; Pt-GaN; H-2; PIEZOELECTRIC POLARIZATION; HETEROSTRUCTURES
- 제목
- Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer
- 저자
- Chung, G.; Cha, H. -Y.; Kim, H.
- 발행일
- 2018-07-12
- 유형
- Article
- 권
- 54
- 호
- 14
- 페이지
- 896 ~ +