AlGaN/GaN MOSHFET Power Switching Transistor with Embedded Fast Recovery Diode

초록

In this study, a novel AlGaN/GaN power-switching device is proposed for use in high-efficiency DC-DC converters. The proposed structure is composed of a normally-off AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) and an embedded freewheeling Schottky barrier diode (SBD). The effects of the embedded freewheeling SBD on conversion efficiency were investigated based on circuit simulation of DC-DC synchronous buck converters. The SBD embedment not only reduces the chip size and cost, but also improves the power conversion efficiency at high operation frequencies, due to the reduced off-state power loss.

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