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Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption
- Choi, J. -H.;
- Jo, M. -G.;
- Han, S. -W.;
- Kim, H.;
- Kim, S. -H.;
- ... Cha, H. -Y.;
- 외 2명
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17초록
A Pd-functionalised hydrogen gas sensor based on an AlGaN/GaN heterostruture platform was investigated. The optimum bias voltage and reaction temperature were 0.1 V and 200 degrees C, respectively, with which a wide range of hydrogen concentration from 0.1-4% in the air (i.e. 1000-40,000 ppm) was detectable. Not only low-power consumption but also high sensitivity with fast response was achieved due to the excellent properties of the AlGaN/GaN heterostructure platform. The sensitivity was 72.8% with a response time of approximate to 3 s in 4% hydrogen concentration.
키워드
hydrogen; gas sensors; palladium; aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; power consumption; semiconductor heterojunctions; hydrogen gas sensor; Pd-functionalised heterostructure; high sensitivity; low-power consumption; optimum bias voltage; reaction temperature; hydrogen concentration; voltage 0; 1 V; temperature 200 degC; H-2; AlGaN-GaN; Pd
- 제목
- Hydrogen gas sensor of Pd-functionalised AlGaN/GaN heterostructure with high sensitivity and low-power consumption
- 저자
- Choi, J. -H.; Jo, M. -G.; Han, S. -W.; Kim, H.; Kim, S. -H.; Jang, S.; Kim, J. -S.; Cha, H. -Y.
- 발행일
- 2017-08
- 유형
- Article
- 권
- 53
- 호
- 17
- 언어
- ENG
- 출판사
- INST ENGINEERING TECHNOLOGY-IET
- 발행국가
- 영국
- ISSN
- E 1350-911X
P 0013-5194