Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs

초록

The extraction of channel mobility was performed on normally-off AlGaN/GaN gate-recessed metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) on GaN-on-Si substrate. Channel mobility was extracted from the unit device with 2 mu m gate length by taking account of voltage drop across the gate-to-drain and the gate-to-source regions in order to minimize the effect of parasitic resistance. Extracted mobility became quite close to the mobility of 100 mu m gate-length device suggesting that the parasitic resistance should be considered to provide accurate information on the channel under the recessed gate.

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