Demonstration of High-Performance Ultra-Wide Bandgap SrSnO3 Top-Gated MOSFETs

초록

We report the demonstration of high-performance top-gated metal–oxide–semiconductor field-effect transistors (MOSFETs) based on the ultra-wide bandgap perovskite oxide SrSnO3 (SSO). Using hybrid molecular beam epitaxy-grown SSO channels and ALD-deposited HfO2 gate dielectrics, the devices exhibit field-effect mobility exceeding 65 cm2/V · s, an on-state current up to 194mA/mm, an on/off current ratio above 1×108, and a contact resistance of 1.3Ω·mm. The devices also show a near-ideal subthreshold slope of 68mV/dec and negligible hysteresis, indicating a high-quality dielectric/semiconductor interface. These results establish SrSnO3 as a promising ultra-wide bandgap oxide semiconductor platform for high-performance power electronic applications. © 1980-2012 IEEE.

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