Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress

  • Koo, Ryun-Han
  • Shin, Wonjun
  • Ryu, Sangwoo
  • Kim, Seungwhan
  • Jung, Gyuweon
  • ... 이성태
  • 외 3명
Citations

WEB OF SCIENCE

6
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7

초록

We investigate domain wall (DW) movementin hafnium zirconium oxide (HZO) under various temper-ature (T) and cycling stresses. It is demonstrated thatcycling stress distinctly impacts the behavior in the DW relaxation, creep, and flow regimes. Specifically, cyclingstress increases the energy barrier that DW must overcometo transition from the relaxation to creep regime. However,it has a negligible effect on the boundary condition ofthe electrical (E)-field value between the creep and flowregimes. Consequently, aT-Ephase diagram for HZO ispresented, which distinctively delineates these regimes,and offers clear insights into the cycling stress-inducedchanges in ferroelectric DW dynamics

키워드

CreepSwitchesStressIronCurrent measurementDynamicsBoundary conditionsHafnium zirconium oxide (HZO)ferroelectric tunnel junction (FTJ)switching mechanismdomain wall (DW)E HYSTERESIS LOOPTHIN-FILMSMECHANISMS
제목
Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress
저자
Koo, Ryun-HanShin, WonjunRyu, SangwooKim, SeungwhanJung, Gyuweon이성태Kim, Jae-JoonKwon, DaewoongLee, Jong-Ho
DOI
10.1109/LED.2024.3390090
발행일
2024-06
유형
Article
저널명
IEEE Electron Device Letters
45
6
페이지
1016 ~ 1019