Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

초록

Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduction of on-current was induced by displacement damage which also affected ungated devices with no p-AlGaN gate layer. Thermal annealing partially recovered this reduction. The subthreshold degradation with the threshold voltage (V-th) shift was proportional to the irradiation dose. TCAD simulation indicated that the decrease of hole concentration in p-AlGaN layer resulted in the negative shift of V-th and the subthreshold degradation.

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