Scaling of Data Retention Statistics in Phase-Change Random Access Memory

Kwon, Yongwoo; Park, Byoungnam; Kang, Dae-Hwan

doi:10.1109/LED.2015.2414952

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Scaling of Data Retention Statistics in Phase-Change Random Access Memory

Citations

WEB OF SCIENCE

12

Citations

SCOPUS

11

초록

A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found.

키워드

Phase-change random access memory (PC-RAM); data retention; modeling; CRYSTALLIZATION; KINETICS

제목: Scaling of Data Retention Statistics in Phase-Change Random Access Memory

저자: Kwon, Yongwoo; Park, Byoungnam; Kang, Dae-Hwan

DOI: 10.1109/LED.2015.2414952

발행일: 2015-05

유형: Article

저널명: IEEE Electron Device Letters

권: 36

호: 5

페이지: 454 ~ 456

언어: ENG

출판사: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

발행국가: 미국

분량: 3 페이지

ISSN: E 1558-0563
P 0741-3106