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자료 필터
자료유형
발행연도
2008 ~ 2026
2008 2026
키워드
언어
전체 158건 중 111번부터 120번까지의 결과를 표시합니다.
2014
Article
Development of a Au-free process using Mo-based metallization for high-power AlGaN/GaN-on-Si heterostructure field-effect transistors
- Choi, Shinhyuk ;
- Lee, Jae-Gil ;
- Kang, Youngjin ;
- Cha, Ho-Young ;
- Kim, Hyungtak ;
- ... Cho, Chun-Hyung
- 2014-08
- Journal of the Korean Physical Society
- KOREAN PHYSICAL SOC
Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths
- Park, Youngrak ;
- Kim, Jung-Jin ;
- Chang, Woojin ;
- Jang, Hyun-Gyu ;
- Na, Jeho ;
- ... Cha, Ho-Young ;
- 외 5명
- 2014-07-31
- Electronics Letters
- INST ENGINEERING TECHNOLOGY-IET
Article
A Study on the Semiconductor Stress-Sensors with the combined Meandering-Patterns and the Simplified Calibration Methods for High-Sensitivity
- 2014-07
- Proceedings of 2014 AWAD
Article
Metal Free Growth of Graphene on Quartz Substrate Using Chemical Vapor Deposition (CVD)
- Hwang, Jeonghyun ;
- Kim, Moonkyung ;
- Cha, Ho-Young ;
- Spencer, Michael G. ;
- Lee, Jo-Won
- 2014-04
- Journal of Nanoscience and Nanotechnology
- AMER SCIENTIFIC PUBLISHERS
Article
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
- Choi, Woojin ;
- Seok, Ogyun ;
- Ryu, Hojin ;
- Cha, Ho-Young ;
- Seo, Kwang-Seok
- 2014-02
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain
- Lee, Jae-Gil ;
- Han, Sang-Woo ;
- Park, Bong-Ryeol ;
- Cha, Ho-Young
- 2014-01
- Applied Physics Express
- IOP PUBLISHING LTD
Article
Improvement of V-th Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
- Choi, Woojin ;
- Ryu, Hojin ;
- Jeon, Namcheol ;
- Lee, Minseong ;
- Cha, Ho-Young ;
- 외 1명
- 2014-01
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
- Choi, Woojin ;
- Ryu, Hojin ;
- Jeon, Namcheol ;
- Lee, Minseong ;
- Lee, Neung-Hee ;
- ... Cha, Ho-Young ;
- 외 1명
- 2014
- 2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD)
- IEEE
Article
High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO 2
- Choi, W. ;
- Ryu, H. ;
- Seok, O. ;
- Kim, M. ;
- Cha, H.-Y. ;
- 외 1명
- 2014
- CS MANTECH 2014 - 2014 International Conference on Compound Semiconductor Manufacturing Technology
- GaAs Mantech, Incorporated