차호영 프로필 사진

차호영

Cha, Ho Young

공과대학

전자전기공학부

자료 필터

자료유형

발행연도

2008 ~ 2026
2008 2026

키워드

언어

전체 158건 중 121번부터 130번까지의 결과를 표시합니다.

2014
Article

Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs

  • Choi, W. ; 
  • Ryu, H. ; 
  • Jeon, N. ; 
  • Lee, M. ; 
  • Lee, N.-H. ; 
  • ... Cha, H.-Y. ; 
  • 외 1명
  • 2014
  • Proceedings of the International Symposium on Power Semiconductor Devices and ICs
  • Institute of Electrical and Electronics Engineers Inc.
2013
Article

Schottky barrier diode embedded AlGaN/GaN switching transistor

  • 2013-12
  • Semiconductor Science and Technology
  • IOP PUBLISHING LTD
Article

Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress

  • 2013-09
  • Journal of the Korean Physical Society
  • KOREAN PHYSICAL SOC
Article

Error analysis in stress measurement induced by the strain effects on (111) silicon

  • 2013-05
  • Journal of the Korean Physical Society
  • KOREAN PHYSICAL SOC
Article

Nonvolatile memory device based on SiO2/GaN/AlGaN/GaN heterostructure

  • 2013-04-11
  • Electronics Letters
  • INST ENGINEERING TECHNOLOGY-IET
Article

Structural effects on heat dissipation in InGaAs MHEMTs

  • Noh, Jinhyun ; 
  • Ryoo, Yeonmi ; 
  • Jeon, Namcheol ; 
  • Cha, Ho-Young ; 
  • Seo, Kwang-Seok
  • 2013-04
  • Semiconductor Science and Technology
  • IOP PUBLISHING LTD
Article

Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode

  • 2013-03
  • Applied Physics Express
  • IOP PUBLISHING LTD
Article

Bias-stress-induced trapping effect of high-voltage field-plated AlGaN/GaN-on-Si heterostructure FETs

  • 2013-03
  • Journal of the Korean Physical Society
  • KOREAN PHYSICAL SOC
Article

High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

  • 2013-03
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

  • 2013-02
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC