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전체 158건 중 31번부터 40번까지의 결과를 표시합니다.
2021
Article
Operation of NO2 Gas Sensors based on Pd-AlGaN/GaN HEMT up to 500 °C
- Van Cuong Nguyen ;
- Ho-Young Cha ;
- Hyungtak Kim
- 2021-12
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- 대한전자공학회
Article
Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor
- Choi, June-Heang ;
- Park, Taehyun ;
- Hur, Jaehyun ;
- Cha, Ho-Young
- 2021-06
- NANOMATERIALS
- MDPI
Article
Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
- Vuong, Tuan-Anh ;
- Cha, Ho-Young ;
- Kim, Hyungtak
- 2021-05
- Micromachines
- MDPI
Article
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
- Hwang, Il-Hwan ;
- Kang, Myoung-Jin ;
- Cha, Ho-Young ;
- Seo, Kwang-Seok
- 2021-04
- Crystals
- MDPI
Article
Photoresponsivity Enhancement of AlGaN/GaN Heterojunction Phototransistor with ZnO Nanodot Coating Layer
- Won-Ho Jang ;
- June-Heang Choi ;
- Chang-Yeol Han ;
- Heesun Yang ;
- Ho-Young Cha
- 2021-02
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- 대한전자공학회
Article
원자층 증착법을 이용한 AlN 박막을 통한 AlGaN/GaN 이종접합의 전류 개선 연구
- 장원호 ;
- 김태현 ;
- 임준혁 ;
- 차호영
- 2021
- 전자공학회논문지
- 대한전자공학회
Article
Light Emitting Properties of Si Micro Single Crystal Grown by Mixed-Source HVPE Method
- Kim, K.H. ;
- Lee, G.S. ;
- Park, J.H. ;
- Kim, S.Y. ;
- Ahn, H.S. ;
- ... Cha, H.-Y. ;
- 외 9명
- 2021
- 새물리
- Korean Physical Society
2020
Article
High-Sensitivity Hydrogen Sensor Based on AIGaN/GaN Heterojunction Field-Effect Transistor
- Choi, June-Heang ;
- Tuan Anh Vuong ;
- Kim, Hyungtak ;
- Cha, Ho-Young
- 2020-07
- Journal of Nanoscience and Nanotechnology
- AMER SCIENTIFIC PUBLISHERS
Article
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double-Heterostructure High-Electron Mobility Transistor (DH-HEMT) on Sapphire
- Choi, Uiho ;
- Kim, Hyun-Seop ;
- Lee, Kyeongjae ;
- Jung, Donghyeop ;
- Kwak, Taemyung ;
- ... Cha, Ho-Young ;
- 외 9명
- 2020-04
- physica status solidi (a) - applications and materials science
- WILEY-V C H VERLAG GMBH
Article
The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode
- Ki, Ra-Seong ;
- Lee, Jea-Gil ;
- Cha, Ho-Young ;
- Seo, Kwang-Seok
- 2020-04
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD