SAGE Open

ISSN
P 2158-2440
출판사
SAGE Publications Inc.
국가
USA
발행 상태
활성

데이터베이스 수록 정보

CiteScore 2012-2025 (14년)
DOAJ 2017-2025 (9년)
ESCI 2016-2018 (3년)
JCR 2018-2025 (8년)
Scopus 2011-2026 (16년)
SJR 2000-2002, 2012-2020, 2022-2025 (16년)
SSCI 2018-2026 (9년)

전체 12건 중 1번부터 10번까지의 결과를 표시합니다.

2025
Article

Theoretical Evaluation of Reliability and Via Resistance of Liner-Less Co Interconnect Using Co-Ti Binary Alloy

  • Park, Shinyeong
  • Kang, Seongwoo
  • Kim, Gayun
  • Moon, Joonho
  • Lee, Kiyoung
  • 외 1명
  • 2025-09-05
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Comparative Analysis of Grain Boundary Effects in FET-Type and Diode-Type 3-D NAND Flash Memory

  • Kim, Jinsu
  • Kim, Hansol
  • Im, Jisung
  • Lee, Sung-Tae
  • Kwon, Dongseok
  • 외 2명
  • 2025-09-01
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Quantitative Analysis of Trap Behaviors for Deuterium Annealing Effect on IGZO TFTs by TCAD and Experimental Characterization

  • Song, Hyeonjun
  • Yoon, Soon Joo
  • Yoo, Jaewook
  • Lim, Seongbin
  • Ku, Ja-Yun
  • ... Lee, Kiyoung
  • 외 10명
  • 2025-03
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2023
Article

Effects of Sensor Platform Scaling on Signal-to-Noise Ratio in the Resistor-and Horizontal Floating-Gate FET-Type Gas Sensors

  • Shin, Wonjun
  • Koo, Ryun-Han
  • Hong, Seongbin
  • Jung, Gyuweon
  • Jeong, Yujeong
  • ... Lee, Sung-Tae
  • 외 1명
  • 2023-11
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers Inc.
Article

Annealing Ambient and Film Thickness Dependent NO<inline-formula> <tex-math notation=LaTeX>$_{\text{2}}$</tex-math> </inline-formula> Response and 1/<italic>f</italic> Noise Characteristics of IGZO Resistor-Type Gas Sensors

  • Shin, Wonjun
  • Koo, Ryun-Han
  • Hong, Seongbin
  • Jeong, Yujeong
  • Jung, Gyuweon
  • ... Lee, Sung-Tae
  • 외 1명
  • 2023-10-01
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers Inc.
Article

Neuromorphic Computing Using Random Synaptic Feedback Weights for Error Backpropagation in NAND Flash Memory-Based Synaptic Devices

  • 2023-03-01
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers Inc.
2017
Article

Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels-Part II. Relationship Between Exo-Electron Currents and Statistical Delay

  • Kim, Joong Kyun
  • Kim, Yong-Seog
  • Weber, Larry F.
  • 2017-08
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels-Part I. Mechanism of Exo-Electron Emission

  • Kim, Yong-Seog
  • Kim, Joong Kyun
  • Weber, Larry F.
  • 2017-08
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2012
Article

Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

  • Kim, Yongsik
  • Bae, Minkyung
  • Kim, Woojoon
  • Kong, Dongsik
  • Jeong, Hyun Kwang
  • ... Kim, Hyungtak
  • 외 3명
  • 2012-10
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2010
Article

Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors

  • 2010-09
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
1