김형탁 프로필 사진

김형탁

Kim, Hyung tak

공과대학

전자전기공학부

자료 필터

자료유형

발행연도

2009 ~ 2026
2009 2026

키워드

언어

전체 87건 중 51번부터 60번까지의 결과를 표시합니다.

2017
Article

AlGaN/GaN-on-Si Power FET with Mo/Au Gate

  • 2017-04
  • JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
  • IEEK PUBLICATION CENTER
Article

Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

  • 2017-01
  • IEEE Transactions on Nuclear Science
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Integrated Temperature Mapping of Lateral Gallium Nitride Electronics

  • Lundh, J. S. ; 
  • Chatterjee, B. ; 
  • Dallas, J. ; 
  • Kim, H. ; 
  • Choi, S.
  • 2017
  • PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017
  • IEEE
Article

Electro-Thermal Reliability Study of GaN High Electron Mobility Transistors

  • Chatterjee, B. ; 
  • Lundh, J. S. ; 
  • Dallas, J. ; 
  • Kim, H. ; 
  • Choi, S.
  • 2017
  • PROCEEDINGS OF THE 2017 SIXTEENTH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017
  • IEEE
Article

Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation

  • 2017
  • ECS Journal of Solid State Science and Technology
  • ELECTROCHEMICAL SOC INC
2016
Article

Investigation of kink effect in normally-off AlGaN/GaN recessed-gate MOS-heterostructure FETs

  • 2016-09
  • Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
  • A V S AMER INST PHYSICS
Article

Non-volatile memory operation in normally-off GaN MOS heterostructure field effect transistors with thin AlGaN barrier

  • 2016-04-14
  • Electronics Letters
  • INST ENGINEERING TECHNOLOGY-IET
Article

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • 2016-04
  • JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
  • IEEK PUBLICATION CENTER
2015
Article

Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs

  • 2015-12
  • IEEE Transactions on Nuclear Science
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC