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자료 필터
자료유형
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2008 ~ 2026
2008 2026
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전체 158건 중 81번부터 90번까지의 결과를 표시합니다.
2017
Article
A Study on Shear-stress Calibration by the Mid-point Measurements in+45/-45 Degree Semiconductor Resistor-pair
- 2017-04
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- IEEK PUBLICATION CENTER
Article
Editorial
- Kwon, Hyuck-In ;
- Cha, Ho-Young ;
- Choi, Woo Young ;
- Yoon, Sung-Min
- 2017-04
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- IEEK PUBLICATION CENTER
Article
AlGaN/GaN-on-Si Power FET with Mo/Au Gate
- Kim, Hyun-Seop ;
- Jang, Won-Ho ;
- Han, Sang-Woo ;
- Kim, Hyungtak ;
- Cho, Chun-Hyung ;
- ... Cha, Ho-Young ;
- 외 1명
- 2017-04
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- IEEK PUBLICATION CENTER
Article
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
- Yoon, Seonno ;
- Lee, Seung Min ;
- Kim, Jeyoung ;
- Lee, Hi-Deok ;
- Cha, Ho-Young ;
- 외 1명
- 2017-03
- Semiconductor Science and Technology
- IOP PUBLISHING LTD
Article
Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver
- Han, S. -W. ;
- Park, S. -H. ;
- Kim, H. -S. ;
- Jo, M. -G. ;
- Cha, H. -Y.
- 2017-02-02
- Electronics Letters
- INST ENGINEERING TECHNOLOGY-IET
Article
Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate
- Ko, Kwangse ;
- Lee, Kyeongjae ;
- So, Byeongchan ;
- Heo, Cheon ;
- Lee, Kyungbae ;
- ... Cha, Ho-Young ;
- 외 3명
- 2017-01
- Japanese Journal of Applied Physics
- IOP PUBLISHING LTD
2016
Article
Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE
- Han, Sang-Woo ;
- Noh, Youngkyun ;
- Jo, Min-Gi ;
- Kim, Seung-Hwan ;
- Oh, Jae-Eung ;
- ... Cha, Ho-Young ;
- 외 1명
- 2016-12
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
- Kim, Hyun-Seop ;
- Heo, Seoweon ;
- Cha, Ho-Young
- 2016-12
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- IEEK PUBLICATION CENTER
Article
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors
- Lee, Jae-Gil ;
- Kim, Hyun-Seop ;
- Seo, Kwang-Seok ;
- Cho, Chun-Hyung ;
- Cha, Ho-Young
- 2016-08
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD